1·The model includes the substrate bias effect, the short channel effect and the relation between these two effects.
它综合考虑了衬偏效应、短沟道效应以及两者之间的关系。
2·The results showed that diffusion coefficient and diffusive distance increased with raising of negative substrate bias.
结果表明扩散系数和扩散距离都随着负衬底偏压的增大而增大。
3·And, with the enhancement of substrate bias voltage, electron energy increase gradually, electron density decrease sharply.
且随着基片偏压值的增大，电子能量有缓慢的增加，而电子密度则显著下降。
4·In the paper, the enhancing process of diamond nucleation by negative substrate bias in hot filament CVD system was analyzed.
对利用热灯丝cvd沉积金刚石膜时负衬底偏压增强金刚石的核化过程进行了分析。
5·In this paper, the nucleation process of diamond by filament CVD was analyzed, and enhanced flux of ions by negative substrate bias was investigated in theory.
木文对热灯丝cvd沉积金刚石膜的核化过程进行了分析，从理论上研究了负衬底偏压增强活性离子的流量。
6·In this paper, the nucleation process of diamond by filament CVD was analyzed, and enhanced flux of ions by negative substrate bias was investigated in theory.
本文对热灯丝cvd沉积金刚石膜的核化过程进行了分析，从理论上研究了负衬底偏压增强活性离子的流量。
7·The diamond growth rate may be enhanced by the substrate bias due to the changes of atomic hydrogen concentration and the increase of mean electron temperature.
偏压的升高可提高电子平均温度及衬底表面附近氢原子的相对浓度；
8·The main process parameters include hydrogen content in the gas sources, hydrogen plasma catalyst pretreatment, substrate bias, deposition temperature and plasma flow guiding.
主要之制程参数包括气源中之氢气含量、电浆前处理、材偏压、积温度以及电浆导流板之施加。
9·Tetrahedral amorphous carbon (ta-C) films have been deposited on P-type (100) polished c-silicon wafer with different substrate negative bias by filtered cathodic vacuum arc technology.
采用过滤阴极真空电弧技术并施加一定的衬底负偏压，在P（100）单晶硅片上制备出四面体非晶碳薄膜。
10·Selfnegative bias on insulate substrate surface of rf glow discharge plasma reactors is studied theoretically. The mathematical analysis has been obtained by equivalent circuit method.
讨论了高频辉光放电等离子体系统中绝缘衬底表面的自负偏压问题，用等效电路方法给出了自负偏压的数学解析。